HDBLS101G thru HDBLS107G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Bridge Rectifiers FEATURES - UL Recognized File # E-326854 - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DBLS MECHANICAL DATA CaseMolded plastic body Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant TerminalMatte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test PolarityPolarity as marked on the body Weight0.36 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25 unless otherwise noted) PARAMETER SYMBOL HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS 101G 102G 103G 104G 105G 106G 107G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Maximum instantaneous forward voltage (Note 1) IF= 1 A VF Maximum DC reverse current at rated DC blocking voltage IR TJ=25 TJ=125 1.0 1.3 V 1.7 5 500 uA Maximum reverse recovery time (Note 2) Trr Typical thermal resistance RjL RjA 15 40 TJ - 55 to + 150 O C - 55 to + 150 O C Operating junction temperature range Storage temperature range TSTG 50 75 nS O Note 1: Pulse Test with PW=300 usec,1% Duty Cycle Notes 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document NumberDS_D1310040 Version:E13 C/W HDBLS101G thru HDBLS107G Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING CODE C1 HDBLS10xG (Note 1) Suffix "G" RD 50 / TUBE DBLS 1500 / 13" Paper reel Note 1: "x" defines voltage from 50V (HDBLS101G) to 1000V (HDBLS107G) EXAMPLE PREFERRED P/N PART NO. HDBLS107G RD HDBLS107G RD HDBLS107G RD HDBLS107G RDG PACKING CODE GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 10 1.5 1 0.5 RESISTIVE OR INDUCTIVE LOAD 0 0 20 40 60 80 100 120 AMBIENT TEMPERATURE 140 160 (oC) INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE HDBLS101G HDBLS104G 1 HDBLS106G HDBLS107G 0.1 70 50 40 30 20 10 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 1.6 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 8.3mS Single Half Sine Wave (JEDEC Method) 60 0.6 1000 INSTANTANEOUS REVERSE CURRENT (uA) PEAK FORWARD SURGE CURRENT (A) 0.4 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT HDBLS105G 100 TJ=125 10 TJ=25 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document NumberDS_D1310040 Version:E13 HDBLS101G thru HDBLS107G Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 70 f=1.0MHz Vsig=50mVp-p CAPACITANCE (pF) A 60 50 HDBLS101G HDBLS105G 40 30 HDBLS106G HDBLS107G 20 10 0 0.1 1 10 100 1000 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. A Unit(mm) Unit(inch) Min Max Min Max 5.00 5.20 0.197 0.205 B 1.02 1.20 0.040 0.047 C 8.13 8.51 0.320 0.335 D 2.40 2.60 0.094 0.102 E 9.80 10.30 0.386 0.406 F 6.20 6.50 0.244 0.256 G 0.22 0.33 0.009 0.013 H 1.02 1.53 0.040 0.060 I 0.076 0.33 0.003 0.013 J 3.90 4.10 0.154 0.161 SUGGESTED PAD LAYOUT Symbol Unit(mm) A 2.3 B 1.3 C 6.9 D 11.5 E 2.6 F 9.2 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document NumberDS_D1310040 Version:E13